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M-Pulse Microwave
Low OperatingVoltage, High fT SiGe Microwave Transistors
Features * Designed for Battery Operation * fT to 14 GHz * Low Voltage Oscillator and Amplifier * Low Phase Noise and Noise Figure * Hermetic Packaging and Die Available * Can be Screened to JANTX, JANTXV Equivalent Levels
MPSIG001
Case Styles 535
Description The MPSIG001 family of low voltage, high gain bandwidth silicon SiGe transistors provides low noise figure and high gain at low bias voltages. These transistors are especially attractive for low operating voltage low noise amplifiers or driver amplifiers at frequencies to 5 GHz. They are also useful for low phase noise local oscillators and VCOs in battery operated equipment to 14 GHz. The MPSIG001 family was designed to have low noise figure at operating voltages as low as 2 volts. These transistors also exhibit low phase noise in VCOs operating at 2.5 volts or less. Because this transistor family was specifically designed to operate from low bias voltage, it has superior phase noise. The MPSIG001 series transistors are available in hermetic Micro-X packages and in chip form (MPSIG00100). Other stripline and hermetic packages are available. The chip and hermetic packages can be screened to JANTX, JANTXV equivalent levels .
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
1
Tel (408) 432-1480
Fax (408)) 432-3440
Low Operating Voltage, High fT SiGe Transistors
Maximum Ratings (TA = 25C) MPSIG001 Series
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Operating Temperature Storage Temperature Chip or Ceramic Packages Power Dissipation Micro-X Pkg (MPSIG001-535) 300 mW 150C VCBO VCE VEB IC Tj TS 10 V 3V 1.5 V 75 mA 200C -65C to +200C
MPSIG001 Series
Electrical Specifications @ 25C
MPSIG001 Series
MPSIG00100 Parameter of Test Gain Bandwidth Product Insertion Power Gain Condition VCE = 2 V IC = 20 mA VCE = 2 V IC = 5 mA f = .9 GHz f = 2 GHz VCE = 2 V IC = 5 mA f = .9 GHz f = 2 GHz VCE = 2 V IC = 5 mA f = 2 GHz VCE = 2 V IC = 5 mA f = .9 GHz f = 2 GHz VCE = 2 V IC = 20 mA f = .9 GHz Symbol fT |S21E|2 Units GHz dB 17 typ 11 typ NF dB .9 typ 1.1 typ GTU (max) dB 13 typ MAG dB 19 typ 12 typ P1dB dBm 15 typ 14 typ 18 typ 11 typ 12 typ .9 typ 1.1 typ 16 min 10.0 min Chip 18 typ MPSIG001-535 Micro-X 18 typ
Noise Figure
Unilateral Gain
Maximum Available Gain
Output Power at 1 dB Compression
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
Fax (408)) 432-3440
Low Operating Voltage, High fT SiGe Microwave Transistors
Electrical Specifications @ 25C
Parameter Collector Cut-off Current Collector to Emitter Beakdown Voltage Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Collector to Substrate Breakdown Voltage Forward Current Gain Base Emitter Voltage Condition VCB = 2 volts IE = 0 A Ic = 10 uA IC = 10 uA IE = 10 uA IR = 10 uA VCE = 3 volts IC = 5 mA VCC = 10 uA Symbol ICBO BVCEO BVCBO BVEBO BVSO hFE VBE Min 2.5 7 3 30 20 700 Typical 45 100
MPSIG001 Series
Max 100 300 800
Units A V V V V mV
Typical Common Emitter Scattering Parameters in the MIcro-X Package MPSIG001-535, VCE = 2 Volts, IC = 5 mA
Frequency (MHz) 100 200 300 400 500 1000 1500 2000 2500 3000 S11E Mag. .843 .792 .730 .671 .622 .455 .400 .341 .355 .366 Angle -17.6 -34.2 -49.3 -62.5 -73.4 -108.9 -132.9 -148.7 -167.8 -179.4 Mag. 15.1 14.0 12.7 11.4 10.2 6.1 4.2 3.3 2.8 2.4 S21E Angle 165.5 152.9 142.5 133.8 127.1 108.4 97.6 92.9 89.7 91.1 Mag. 0.021 0.039 0.056 0.065 0.072 0.094 0.108 0.123 0.142 0.160 S12E Angle 78.2 69.1 62.7 57.4 53.7 50.4 53.9 59.3 64.8 71.4 Mag 0.962 0.892 0.805 0.716 0.639 0.377 0.280 0.208 0.208 0.204 S22E Angle -15.4 -29.7 -41.7 -51.8 -59.9 -87.5 -110.0 -125.8 -147.2 -166.8
MPSIG001-535, VCE = 2 Volts, IC = 10 mA
Frequency (MHz) 100 200 300 400 500 1000 1500 2000 2500 3000 S11E Mag. .708 .629 .562 .498 .461 .343 .337 .297 .352 .373 Angle -27.1 -51.2 -70.9 -86.2 -98.1 -133.4 -155.1 -171.5 173.6 162.8 Mag. 24.5 21.8 18.4 15.6 13.4 7.5 5.1 3.9 3.3 2.9 S21E Angle 159.8 143.8 132.1 123.5 117.3 102.3 93.8 90.4 88.7 90.9 Mag. 0.021 0.034 0.044 0.052 0.057 0.079 0.102 0.128 0.157 0.178 S12E Angle 73.8 65.2 59.1 56.4 55.6 60.4 65.6 70.4 73.6 78.1 Mag 0.925 0.801 0.681 0577 0.498 0.280 0.229 0.168 0.214 0.235 S22E Angle -22.7 -42.1 -56.7 -68.3 -76.9 -108.7 -134.4 -171.8 171.9 135.9
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
3
Tel (408) 432-1480
Fax (408)) 432-3440
Low Operating Voltage, High fT SiGe Transistors
MPSIG001-535 Typical Performance Curves
MPSIG001 Series
POWER DERATING CURVE
NOMINAL GAIN vs COLLECTOR CURRENT at VCE = 2 Volts, f = .9 GHz (MPSIG001-535)
350
POWER DIS. (Mw)
22
300 250 200 150 100 50 0 0 50
MPSIG001-535
GAIN (dB)
20
GU(MAX)
18 S21 16
100 ANBIENT TEMP.
150
200
14 2 4 6 8 10 12 14 16 Collector Current
NOMINAL GAIN vs COLLECTOR CURRENT at VCE = 2 Volts, f = 2 GHz (MPSIG001-535)
13 12
GAIN (dB)
GA(MAX) GU(MAX)
11 10 9 8 1 6 11 16 Collector Current S21
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
4
Tel (408) 432-1480
Fax (408)) 432-3440

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